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Phase control of magnetron sputtering deposited Gd2O3 thin films as high-κ gate dielectrics YANG Zhimin1,YUE Shoujing1,WEI Feng1,WANG Yi1,DU Jun1,TU Hailing1 (1.Advanced Electronic Materials Institute, General Research Institute for Nonferrous Metals, Beijing 100088, China) Abstract:Gd2O3 thin films as high-κ gate dielectrics were deposited directly on Si(001) substrates by magnetron......
择优取向生长的Gd2O3高K栅介质薄膜 岳守晶1,杜军1,杨志民1,屠海令1,王毅1,魏峰1 (1.北京有色金属研究总院先进电子材料研究所,北京,100088) 摘要:使用射频磁控溅射法在n型Si(001)基片上生长了Gd2O3薄膜.X射线衍射扫描研究和高分辨透射电子显微镜观察表明,薄膜由立方相和单斜相混合构成,且表现出立方(111)晶面和单斜(401)晶面的择优取向生长.XPS分析表明薄膜的元素组成接近化学计量比.电性能测试发现,薄膜拥有合适的介电常数,较小的漏电流密度和较大的击穿场强,厚度为15 nm的薄膜介电常数为23,漏电流密度为3.6×10-15A·cm-2(偏压为+1 V时),击穿场强为3.5 MV·cm-1. 关键词:Gd2O3薄膜; 稀土氧化物; 高K栅介质; 磁控溅射; [全文内容正在添加中] ......
Gd2O3的添加对Gd-Ba-Cu-O超导块材性能的影响 于泽铭1,张翠萍1,冯勇1,张红2,熊晓梅1,周廉1 (1.西北有色金属研究院,陕西,西安,710016;2.东北大学,辽宁,沈阳,110004) 摘要:采用PMP工艺在空气中成功制备了φ17 mm的单畴Gd-Ba-Cu-O超导体.利用Gd2O3代替Gd 211的添加,同样可以提高Gd-Ba-Cu-O的超导性能,并且可以降低样品的制备成本.但过量的Gd2O3的添加会造成Gd-Ba-Cu-O超导体中Gd-Ba固溶体的增加,从而降低样品的超导性能.本实验中Gd2O3的最佳添加量为0.15 mol,制备的样品捕获磁通达到0.36 T(77 K). 关键词:Gd2O3; Gd-Ba-Cu-O; 添加; [全文内容正在添加中] ......
Effect of Gd2O3 and La2O3 on BaTiO3 -Based Ceramics Wang Hongru1,Wu Xiawan1,WANG Dapeng1,Li Lingxia1,Zhang Zhiping1 (1.School of Electronic Information Engineering, Tianjin University, Tianjin 300072, China) Abstract:The addition of rare-earth oxides Gd2O3 and La2O3 to BaTiO3-based ceramics can restrain the growth of grain size, which obtained small grain size below 1 μm and high density......
Gd2O3掺杂CeO2纳米粉体的烧结动力学 赵文广1,苑晓光1,赵永旺1,王秀英1,安胜利1,宋希文1 (1.内蒙古科技大学,内蒙古,包头,014010;2.北京科技大学,北京,100083) 摘要:对Gd2O3掺杂CeO2纳米粉体进行了等速烧结实验研究.得出了试样的线收缩率,密度,气孔率随烧结温度的变化规律,回归出了描述这些物理量与烧结温度之间关系的动力学方程. 关键词:纳米粉体; 氧化钆掺杂氧化钸; 烧结动力学; 固体电解质; [全文内容正在添加中] ......
立方Gd2O3∶Eu纳米晶及光谱性质 () [全文内容正在添加中] ......
Phase Constitution in Mixed Gd2O3 and B4C by Sintering at High Temperature Sun Shuchen1,HU Guangyong1,Xu Jingyu1,Bian Xue1,Wu Wenyuan1,Tu Ganfeng1 (1.School of Material and Metallurgy, Northeastern University, Shenyang 110004, China) Abstract:The phase constitution in mixed Gd2O3 and B4C by sintering in graphite tube furnace at the temperature of 100~1489 ℃ in argon atmosphere was studied......
(Sm2O3)0.04(Gd2O3)0.06掺杂CeO2纳米粉体的制备与表征 赵文广1,赵永旺1,安胜利1,宋希文1,王哲峰1 (1.内蒙古科技大学,内蒙古,包头,014010;2.北京科技大学,北京,100083) 摘要:以Sm2O3,Gd2O3与Ce2(CO3)3·nH2O为原料,采用改进的沉淀法制备了二元稀土(Sm2O3)0.04 (Gd2O3)0.06掺杂CeO2纳米粉体.测定了...XRD分析可知,经750℃焙烧的二元稀土掺杂CeO2粉末为立方萤石结构,说明Sm2O3与Gd2O3已完全固溶到CeO2中,形成了CeO2基固溶体.由TEM照片可以看出,粉末具有良好的分散性,呈软团聚状态,粒径在5nm~10nm之间.经BET测试计算的平均颗粒尺寸为11nm,与TEM结果是一致的. 关键词:氧化钐; 氧化钆; 氧化铈; 纳米陶瓷粉体; Sol-Gel法; [全文内容正在添加中] ......
of Gd2O3 was investigated, and the relationship between magnetic property and temperature was also discussed. The results show that, the mass magnetizability (χg) descends as temperature rising. Processing temperature and time do not exhibit evidenced effects on the mass magnetizability (χg). All the composites show to be antiferromagnetic. Key words:Gd2O3; X-NBR; magnetism; composite; rare earths......
溶胶-凝胶法制备二元稀土掺杂(Sm2O3)0.04 (Gd2O3)0.06 Ce0.8O2-δ纳米粉体 赵文广1,赵永旺1,安胜利2,宋希文2,王哲峰1 (1.内蒙古科技大学内蒙古,包头,014010;2.北京科技大学,北京,100083) 摘要:以Sm2O3,Gd2O3与Ce2(CO3)3.nH2O为原料,采用Sol-Gel法制备了二元稀土掺杂(Sm2O3)0.04(Gd2O3...粉体的热分解温度约为232℃.由粉末XRD分析可知,经750℃焙烧的二元稀土掺杂CeO2粉末为立方萤石结构,说明Sm2O3与Gd2O3已完全固溶到CeO2中形成了CeO2基固溶体.由TEM照片可以看出,粉末具有良好的分散性,呈软团聚状态,粒径在5-10nm之间.经BET测试计算的平均颗粒尺寸为11nm,与TEM结果是一致的. 关键词:氧化钐; 氧化钆; 氧化铈; 纳米陶瓷粉体; Sol-Gel法......